PART |
Description |
Maker |
27C256 |
256K CMOS UV Erasable PROM (32K X 8)
|
Philips Semiconductors
|
27C256 |
256K CMOS UV Erasable PROM (32K X 8)
|
General Semiconductor Inc
|
29F002 MX29F002BQI-12 MX29F002NBQI-12 MX29F002TPI- |
DIODE SCHOTTKY 15V 2X20A TO247AD DIODE SCHOTTKY 45V 2X20A TO247AD MOSFET N-CH 500V 14A TO-247AD Low Cost Precision Difet Operational Amplifier 8-SOIC 0 to 70 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32 IC MOSFET DRIVER LS 4A DUAL 8DIP 256K X 8 FLASH 5V PROM, 90 ns, PQCC32 MOSFET N-CH 500V 20A TO-247AD 256K X 8 FLASH 5V PROM, 70 ns, PQCC32 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDSO32 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
AT49BV4096A AT49BV4096A-12RC AT49BV4096A-12RI AT49 |
LM4250 Programmable Operational Amplifier; Package: SOIC NARROW; No of Pins: 8 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO40 LM4308 Mobile Pixel Link Two (MPL-2) - 18-bit CPU Display Interface Master/Slave; Package: MICRO-ARRAY; No of Pins: 49 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO40 4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
AT29C020 AT29C020-10 AT29C020-10JC AT29C020-10JI A |
High Speed CMOS Logic Octal Inverting Transparent Latches with 3-State Outputs 20-PDIP -55 to 125 High Speed CMOS Logic Octal Positive-Edge-Triggered Inverting D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 256K X 8 FLASH 5V PROM, 120 ns, PDSO32 High Speed CMOS Logic Octal Non-Inverting Buffers and Line Drivers with 3-State Outputs 20-TSSOP -55 to 125 256K X 8 FLASH 5V PROM, 100 ns, PDIP32 High Speed CMOS Logic Octal Transparent Latches with 3-State Outputs 20-PDIP -55 to 125 256K X 8 FLASH 5V PROM, 150 ns, PDIP32 High Speed CMOS Logic Octal Transparent Latches with 3-State Outputs 20-SOIC -55 to 125 256K X 8 FLASH 5V PROM, 150 ns, PDSO32 2-Megabit 256K x 8 5-volt Only CMOS Flash Memory
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
KM28C64A KM28C65A |
8K x 8 BIT CMOS ELECTRICALLY ERASABLE PROM
|
Samsung Electronic Samsung semiconductor
|
M29W400B-100M5 STMICROELECTRONICS-M29W400T-120ZA1T |
256K X 16 FLASH 2.7V PROM, 100 ns, PDSO44 512K X 8 FLASH 2.7V PROM, 100 ns, PBGA48 256K X 16 FLASH 2.7V PROM, 100 ns, PDSO48 256K X 16 FLASH 2.7V PROM, 150 ns, PDSO48 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO48 256K X 16 FLASH 2.7V PROM, 150 ns, PDSO44
|
STMICROELECTRONICS
|
28C64B 28C64B-90IP 28C64B-12ID 28C64B-12IJ 28C64B- |
64K (8K x8) CMOS Erasable PROM 64K的(8K的8)的CMOS可擦除可编程ROM
|
Microchip Technology, Inc. Microchip Technology Inc. MICROCHIP[Microchip Technology]
|
MX29LV002CBQI-90 MX29LV002CBQI-70 MX29LV002CBTI-90 |
2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 8 FLASH 3V PROM, 90 ns, PQCC32 2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 8 FLASH 3V PROM, 70 ns, PQCC32 2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 8 FLASH 3V PROM, 90 ns, PDSO32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PQCC32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO40 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PDSO40 1M X 8 FLASH 3V PROM, 55 ns, PDSO40
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
IS28LV020-90T IS28LV020-90W |
256K X 8 FLASH 12V PROM, 90 ns, PDSO32 TSOP-32 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 0.600 INCH, PLASTIC, DIP-32
|
Integrated Silicon Solution, Inc.
|